Deposition of thin films based on silica on polycarbonates by pulsed dielectric barier discharge

T. Opalińska; B. Ulejczyk; L. Karpiński; K. Schmidt-Szałowski

Published : 2022-09-01

Vol. 49 No. 4 (2004)

Deposition of thin films based on silica on polycarbonates by pulsed dielectric barier discharge

T. Opalińska B. Ulejczyk L. Karpiński K. Schmidt-Szałowski

Abstract

The process of thin organo-silica film deposition on polycarbonate in pulsed dielectric barrier discharge was studied. Thin film was deposited from the gas mixture comprising helium, oxygen and tetraethoxysilane under atmospheric pressure without pre-heating of polycarbonate plate. Influences of process parameters, namely the current of single pulse of discharge, PC plate arrangement and position, and plasma-generating gas composition on the deposition rate were investigated. Deposition rate increased from 3.4 to 40.8 nm/min when the current of single pulse increased from 50 to 100 A. The presence of oxygen in plasma-generating gas was necessary to thin organosilicon film forming, but the excess of O2 concentration caused decreasing of film deposition rate, for example: deposition rate was 14.9 or 6.0 nm/min when concentration of O2 was changed from 5 to 20 % by vol. In the films, the following elementaly composition (Si, C, O, H) and morphology of deposited films were characterized.

Keywords

wyładowanie impulsowe ; tetraetoksysilan ; cienka warstwa ; poliwęglan pulsed discharge ; tetraethoxysilane ; thin films ; polycarbonates

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Opalińska, T., Ulejczyk, B., Karpiński, L., & Schmidt-Szałowski, K. (2022). Deposition of thin films based on silica on polycarbonates by pulsed dielectric barier discharge. Polimery, 49(4), 257-263. Retrieved from https://ichp.vot.pl/index.php/p/article/view/1748

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T. Opalińska teresa.opalinska@ichp.pl

Affiliation
Industrial Chemistry Research Institute, ul. Rydygiera 8, 01-793 Warszawa

B. Ulejczyk

Affiliation
Industrial Chemistry Research Institute, ul. Rydygiera 8, 01-793 Warszawa

L. Karpiński

Affiliation
Institute of Plasma Physics and Laser Microfusion, ul. Hery 23, Warszawa

K. Schmidt-Szałowski

Affiliation
Warsaw University of Technology, ul. Noakowskiego 3, Warszawa